首页 |元器件品牌

BU208A [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
BU208A
型号： BU208A
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件： 总3页 (文件大小：41K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BU208A  
DESCRIPTION  
·
·With TO-3 package  
·High voltage ,high speed  
APPLICATIONS  
·For use in horizontal deflection output  
stages for color TV receives.  
PINNING(see fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=℃)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
1500  
700  
5
UNIT  
V
Open emitter  
Open base  
V
Open collector  
V
5
A
ICM  
Collector current-peak  
Base current  
7.5  
A
IB  
0.1  
A
IBM  
Base current-peak  
2.5  
A
PT  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25℃  
150  
115  
W
℃
℃
Tj  
Tstg  
-65~150  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-C  
Thermal resistance junction to case  
1. 0  
℃/W  
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BU208A  
CHARACTERISTICS  
Tj=25℃ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
V(BR)EBO  
VCEsat  
VBEsat  
ICES  
PARAMETER  
Collector-emitter sustaining voltage  
Emitter-base breakdown votage  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
CONDITIONS  
IC=0.1A; IB=0;L=25mH  
IE=10mA; IC=0  
MIN  
700  
5
TYP.  
MAX  
UNIT  
V
V
IC=4.5 A;IB=2 A  
1.0  
1.5  
1.0  
0.1  
V
IC=4.5 A;IB=2 A  
V
VCE=1500V;VBE=0  
VEB=5V; IC=0  
mA  
mA  
IEBO  
hFE-1  
hFE-2  
COB  
IC=1A ; VCE=5V  
8
DC current gain  
IC=4.5A ; VCE=5V  
IE=0; VCB=10V;f=1MHz  
IC=0.1A ; VCE=15V  
2.25  
Output capacitance  
125  
7
pF  
MHz  
μs  
fT  
Transition frequency  
ts  
Storage time  
10  
IC=4.5A ;IB=1.8A  
LB=10μH  
tf  
Fall time  
0.7  
μs  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BU208A  
PACKAGE OUTLINE  
Fig.2 Outline dimensions  
3

相关型号：

BU208A/D

 Horizontal Deflection Transistor
ETC

BU208ALEADFREE

 Power Bipolar Transistor, 8A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CENTRAL

BU208A_02

 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
STMICROELECTR

BU208D

 SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
Wing Shing

BU208D

 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
STMICROELECTR

BU208D

 isc Silicon NPN Power Transistor
ISC

BU208D

 Silicon NPN Power Transistors
SAVANTIC

BU209

 isc Silicon NPN Power Transistor
ISC

BU2090

 12-bit, serial IN, parallel OUT driver
ROHM

BU2090-DX

 SIPO Based Peripheral Driver, 0.02A, PDIP16, DIP-16
ROHM

BU2090A/AF/AFS

 Standard LSIs
ROHM

BU2090F

 12-bit, serial IN, parallel OUT driver
ROHM
©2020 ICPDF网 联系我们和版权申明