BD951 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | BD951 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD951
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·DC Current Gain-
: hFE= 40(Min)@ IC= 500mA
·Complement to Type BD952
APPLICATIONS
·Designed for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
80
80
V
5
V
Collector Current-Continuous
Collector Current-Peak
5
8
A
ICM
A
Collector Power Dissipation
@ TC=25℃
PC
40
W
℃
℃
TJ
Junction Temperature
150
Storage Temperature Range
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
3.12
70
UNIT
℃/W
℃/W
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
Rth j-c
Rth j-a
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD951
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCE(
PARAMETER
CONDITIONS
MIN
80
80
5
TYP.
MAX UNIT
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC= 1mA ; IB= 0
V
V
V
IC= 1mA ; IE= 0
IE= 1mA ; IC= 0
IC= 2A; IB= 0.2A
IC= 2A; VCE= 4V
VCB= 80V; IE= 0
1.0
1.4
50
V
)
sat
V
VBE(
)
on
μA
mA
mA
mA
ICBO
Collector Cutoff Current
1.0
0.1
0.2
VCB= 40V; IE= 0,TJ=150℃
ICEO
IEBO
hFE-1
hFE-2
fT
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
VCE= 40V; IB= 0
VEB= 5V; IC= 0
IC= 500mA ; VCE= 4V
IC= 2A ; VCE= 4V
40
20
3
DC Current Gain
Current-Gain—Bandwidth Product
IC= 500mA ; VCE= 4V
MHz
Switching Times
Turn-On Time
0.3
1.5
μs
μs
ton
IC= 1.0A; IB1= -IB2= 0.1A;
VCC= 20V; RL= 20Ω
Turn-Off Time
toff
2
isc Website：www.iscsemi.cn
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