BD943 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BD943 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD943
DESCRIPTION
·
·With TO-220C package
·Low collector saturation voltage
·High current capability
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
UNIT
Open emitter
Open base
22
V
V
22
Open collector
7
5
V
A
PC
Collector dissipation
Junction temperature
Storage temperature
TC=25℃
40
W
℃
℃
Tj
150
-50~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD943
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
22
7
TYP.
MAX
UNIT
V
IC=10mA; IB=0
IE=1mA; IC=0
V
IC=2A; IB=0.2A
IC=2A; IB=0.2A
VCB=22V; IE=0
VEB=7V; IC=0
0.5
1.2
50
V
V
μA
μA
IEBO
Emitter cut-off current
50
hFE
DC current gain
IC=0.5A ; VCE=1V
IC=0.25A ; VCE=10V
85
3
475
fT
Transition frequency
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD943
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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BD9470AFM
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