BD204F [ISC]
isc Silicon PNP Power Transistor; ISC的硅PNP功率晶体管
| 型号： | BD204F |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon PNP Power Transistor |
| 文件： | 总2页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD202F/204F
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -45V(Min)- BD202F
-60V(Min)- BD204F
·Complement to Type BD201F/203F
APPLICATIONS
·Designed for use in hi-fi equipment delivering an output
of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
-60
UNIT
BD202F
BD204F
BD202F
BD204F
VCBO
Collector-Base Voltage
V
-60
-45
VCEO
Collector-Emitter Voltage
Emitter-Base Voltage
V
-60
VEBO
IC
ICM
IB
-5
V
A
Collector Current-Continuous
Collector Current-Peak
Base Current
-8
-12
A
-3
A
Collector Power Dissipation
@ TC=25℃
PC
TJ
60
W
℃
℃
Junction Temperature
150
-65~150
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
6.3 ℃/W
Thermal Resistance, Junction to Case
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD202F/204F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-45
-60
-60
-5
MAX
UNIT
BD202F
BD204F
Collector-Emitter
Breakdown Voltage
V(BR)CEO
IC= -0.2A ;IB= 0
V
V(BR)CBO
V(BR)EBO
VCE(sat)-1
VCE(sat)-2
VBE(sat)
VBE(
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
IC= -1mA ;IE= 0
V
V
IE= -1mA ;IC= 0
IC= -3A; IB= -0.3A
IC= -6A; IB= -0.6A
IC= -6A; IB= -0.6A
IC= -3A ; VCE= -2V
VCE= -30V; IB= 0
-1.0
-1.5
-2.0
-1.5
-0.2
V
V
V
V
)
on
ICEO
ICBO
IEBO
Collector Cutoff Current
mA
mA
mA
VCB= VCBO;IE= 0
-0.1
-1.0
Collector Cutoff Current
VCB= 1/2VCBO;IE= 0; TJ= 150℃
Emitter Cutoff Current
VEB= -5V; IC=0
-0.5
BD202F
DC Current Gain
IC= -3A ; VCE= -2V
hFE-1
30
BD204F
IC= -2A ; VCE= -2V
hFE-2
fT
DC Current Gain
IC= 11A ; VCE= -2V
30
Current-Gain—Bandwidth Product
7.0
MHz
IC= -0.3A ; VCE= -3V, ftest= 1.0MHz
Switching Times
Turn-On Time
Turn-Off Time
1
2
μs
μs
ton
toff
IC= -2A; IB1= -IB2= -0.2A
2
isc Website：www.iscsemi.cn
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