BD178 [ISC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | BD178 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD176 BD178 BD180
DESCRIPTION
·
With TO-126 package
·Complement to type BD175 /177 /179
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
-45
UNIT
BD176
BD178
BD180
BD176
BD178
BD180
VCBO
Collector-base voltage
Open emitter
Open base
V
-60
-80
-45
VCEO
Collector-emitter voltage
V
-60
-80
VEBO
IC
Emitter -base voltage
Collector current (DC)
Collector current-Peak
Collector power dissipation
Junction temperature
Storage temperature
Open collector
-5
V
A
-3
ICM
PC
Tj
-7
A
TC=25℃
30
W
℃
℃
150
-65~150
Tstg
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD176 BD178 BD180
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEsat
PARAMETER
CONDITIONS
MIN
TYP.
MAX
-0.8
-1.3
UNIT
V
Collector-emitter saturation voltage IC=-1A; IB=-0.1A
VBE
Base-emitter on voltage
IC=-1A ; VCE=-2V
IC=-0.1A; IB=0
V
BD176
BD178
BD180
BD176
BD178
BD180
-45
-60
-80
Collector-emitter
sustaining voltage
VCEO(SUS)
V
VCB=-45V; IE=0
ICBO
Collector cut-off current
-100
μA
VCB=-60V; IE=0
VCB=-80V; IE=0
IEBO
hFE-1
hFE-2
fT
Emitter cut-off current
DC current gain
VEB=-5V; IC=0
-1
mA
IC=-150mA ; VCE=-2V
IC=-1A ; VCE=-2V
IC=-250mA; VCE=-10V
40
15
3
250
DC current gain
Transition frequency
MHz
hFE-1 Classifications
6
10
16
40-100
63-160
100-250
※ classification 16 :only BD176
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD176 BD178 BD180
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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CENTRAL
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