2SD5703 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SD5703 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD5703
DESCRIPTION
·High Breakdown Voltage-
：VCBO= 1500V (Min)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Designed for color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
1500
800
UNIT
V
V
6
V
Collector Current- Continuous
Collector Current- Pulse
10
A
IC
30
A
Collector Power Dissipation
@ TC=25℃
PC
70
W
℃
℃
TJ
Junction Temperature
150
Storage Temperature Range
-55~150
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD5703
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
CONDITIONS
MIN
TYP. MAX UNIT
IC= 8A; IB= 1.6A
5.0
1.5
1
V
VCE
(sat)
IC= 8A; IB= 1.6A
VCE= 1400V; VBE= 0
VCB= 800V; IE= 0
VEB= 4V; IC= 0
V
VBE
(sat)
ICES
mA
μA
mA
ICBO
ICBO
hFE-1
hFE-2
tf
10
1
IC= 1A; VCE= 5V
IC= 8A; VCE= 5V
15
40
7.3
0.3
DC Current Gain
5.3
IC= 6A, IB1= 1.2A; IB2= -2.4A;
VCC= 200V; RL= 33.3Ω
Fall Time
μs
2
isc Website：www.iscsemi.cn
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