2SD428

更新时间:2024-09-18 07:57:53
品牌:ISC
描述:Silicon NPN Power Transistors

2SD428 概述

Silicon NPN Power Transistors 硅NPN功率晶体管

2SD428 数据手册

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INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistors  
2SD427  
DESCRIPTION  
·Collector-Emitter Breakdown Voltage-  
: V(BR)CEO= 120V(Min)  
·High Power Dissipation-  
: PC= 80W(Max)@TC=25℃  
·Complement to Type 2SB557  
APPLICATIONS  
·Designed for power amplifier applications.  
·Recommended for 50W high-fidelity audio frequency  
amplifier output stage.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emiter Voltage  
Emitter-Base Voltage  
VALUE  
120  
120  
5
UNIT  
V
V
V
Collector Current-Continuous  
Emitter Current-Continuous  
8
A
IE  
-8  
A
Collector Power Dissipation  
@TC=25  
PC  
80  
W
TJ  
Junction Temperature  
Storage Temperature  
150  
-65~150  
Tstg  
isc Websitewww.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistors  
2SD427  
ELECTRICAL CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
V(BR)CEO  
V(BR)EBO  
PARAMETER  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Collector Cutoff Current  
CONDITIONS  
MIN  
120  
5
TYP.  
MAX  
UNIT  
V
IC= 0.1A; IB= 0  
IE= 10mA; IC= 0  
IC= 5A; IB= 0.5A  
IC= 5A; VCE= 5V  
VCB= 60V; IE= 0  
VEB= 5V; IC= 0  
V
2.5  
2.0  
0.1  
0.1  
140  
V
VCE  
(sat)  
(on)  
V
VBE  
ICBO  
mA  
mA  
IEBO  
hFE-1  
hFE-2  
COB  
fT  
Emitter Cutoff Current  
DC Current Gain  
IC= 1A; VCE= 5V  
IC= 5A; VC= 5
IE= 0; VCB= 10V; f= 1MHz  
IC= 1A; VCE= 5V  
40  
20  
DC Current Gain  
Output Capacitance  
170  
5
pF  
Current-Gain—Bandwidth Product  
MHz  
‹ hFE-1 Classifications  
R
O
40-80  
70-140  
isc Websitewww.iscsemi.cn  

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