2SD288 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD288 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD288
DESCRIPTION
·
·With TO-220C package
·Collector-base voltage : VCBO=80V
·Collector dissipation : PC=25W(TC=25℃)
APPLICATIONS
·Low frequency power amplifier
·Power regulator applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
V
80
Open base
55
V
Open collector
5
3
V
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
25
W
℃
℃
Tj
150
-55~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD288
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown votage
Collector-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
55
80
5
TYP.
MAX
UNIT
V
IC=10mA; IB=0
IC=0.5mA; IE=0
IE=0.5mA; IC=0
IC=1 A;IB=0.1 A
VCB=50V; IE=0
VEB=5V; IC=0
V
V
1.0
50
V
ICBO
μA
μA
IEBO
Emitter cut-off current
50
hFE
DC current gain
IC=0.5A ; VCE=5V
40
240
hFE classifications
R
O
Y
40-80
70-140
120-240
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD288
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD288
4
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