2SD2236E [ISC]
Transistor;
| 型号： | 2SD2236E |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD2236
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.)
·Wide Area of Safe Operation
·Complement to Type 2SB1477
APPLICATIONS
·Designed for driver and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
100
100
5
UNIT
V
V
V
Collector Current-Continuous
5
A
Collector Power Dissipation
@ TC=25℃
PC
60
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD2236
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
PARAMETER
CONDITIONS
MIN
100
100
5
TYP. MAX UNIT
Collector-Emitter Beakdown Voltage
Collector-Base Beakdown Voltage
Emitter-Base Beakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
IC= 10mA; IB= 0
V
V
V
IC= 50μA; IE=0
IE= 50μA; IC=0
IC= 3A; IB= 0.3A
IC= 3A; IB= 0.3A
VCB= 100V; IE= 0
VEB= 5V; IC= 0
IC= 1A; VCE= 5V
1.5
2.0
10
V
VCE
VBE
(sat)
V
(sat)
ICBO
μA
μA
IEBO
Emitter Cutoff Current
10
hFE
DC Current Gain
60
320
hFE Classifications
D
E
F
60-120
100-200 160-320
2
isc Website：www.iscsemi.cn
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