2SD2151 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD2151 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2151
DESCRIPTION
·
·With TO-220Fa package
·Low collector to emitter saturation voltage
·Large collector current IC
APPLICATIONS
·For power switching applicaitons
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
3
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
UNIT
Open emitter
Open base
130
80
V
V
V
A
A
Open collector
7
10
ICM
Collector current-peak
20
TC=25℃
Ta=25℃
30
PC
Collector power dissipation
W
2
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tj
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2151
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat-1
VCEsat-2
VBE sat-1
VBE sat-2
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=10mA, IB=0
80
IC=6A; IB=0.3A
IC=10A; IB=1A
0.5
1.5
1.5
2.5
10
V
V
IC=6A; IB=0.3A
IC=10A; IB=1A
V
V
VCB=100V; IE=0
VEB=5V; IC=0
μA
μA
IEBO
50
hFE-1
DC current gain
IC=0.1A ; VCE=2V
IC=3A ; VCE=2V
IC=6A ; VCE=2V
IC=0.5A ; VCE=10V;f=1MHz
45
90
30
hFE-2
DC current gain
260
hFE-3
DC current gain
fT
Transition frequency
20
MHz
Switching times
ton
Turn-on time
0.5
2.0
0.2
μs
μs
μs
IC=6A ;IB1=-IB2=0.6A
VCC=50V
ts
Storage time
Fall time
tf
hFE-2 Classifications
Q
P
90-180
130-260
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2151
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
相关型号：
2SD2152/Q
Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
ROHM
2SD2152/QR
Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
ROHM
2SD2152/R
Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
ROHM
2SD2152/RS
Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
ROHM
2SD2152/S
Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
ROHM
©2020 ICPDF网 联系我们和版权申明