2SD2093 [ISC]
Transistor;
| 型号： | 2SD2093 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2093
DESCRIPTION
·With TO-3PML package
·DARLINGTON
·Complement to type 2SB1388
·High DC current gain
·Low saturation voltage
·Large current capacity and large ASO
APPLICATIONS
·Motor drivers
·Printer hammer drivers
·Relay drivers,
·Voltage regulator control
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
110
100
6
UNIT
V
V
V
A
A
Open base
Open collector
10
ICM
Collector current-peak
15
TC=25℃
45
PC
Collector power dissipation
W
3.0
Tj
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2093
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEsat
VBEsat
V(BR)CEO
V(BR)CBO
IEBO
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=5A;IB=10m A
0.9
IC=5A;IB=10m A
IC=5mA;IB=0
2.0
V
110
100
V
IC=50mA;RBE=∞
VEB=5V; IC=0
V
3.0
0.1
mA
mA
ICBO
Collector cut-off current
VCB=80V; IE=0
IC=5 A ; VCE=3V
IC=5 A ; VCE=5V
hFE
DC current gain
1500
4000
20
fT
Transition frequency
MHz
Switching times
ton
Turn-on time
0.6
4.8
1.6
μs
μs
μs
IC=5A IB1=-IB2=10mA
VCC=50V ,RL=10Ω
ts
Storage time
Fall time
tf
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2093
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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