2SD1958 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1958 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1958
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
APPLICATIONS
·TV horizontal deflection output
·High-current switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
3
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
200
60
UNIT
V
Open base
V
Open collector
6
V
4.5
A
ICM
Collector current-peak
Collector dissipation
Junction temperature
Storage temperature
10
A
PC
TC=25℃
30
W
℃
℃
Tj
150
-55~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1958
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
200
60
TYP.
MAX
UNIT
V
IC=5mA; IE=0
IC=5mA; RBE=∞
IE=5mA; IC=0
V
6
V
IC=4A ; IB=0.4A
IC=4A ; IB=0.4A
VCB=40V;IE=0
0.5
1.0
1.5
0.1
0.1
160
V
V
mA
mA
IEBO
VEB=5V;IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
IC=4A ; VCE=5V
IC=1A ; VCE=5V
VCC=50V;IC=5A;IB1=-IB2=500mA
30
25
hFE-2
DC current gain
fT
Transition frequency
10
MHz
tf
Fall time
0.2
0.5
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1958
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1958
4
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