2SD1833 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SD1833 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1833
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@ IC= 4A
·High Collector Power Dissipation
·Good Linearity of hFE
·Wide Area of Safe Operation
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
100
80
UNIT
V
V
V
A
A
5
Collector Current-Continuous
Collector Current-Pulse
7
ICM
10
Collector Power Dissipation
@ Ta=25℃
1.5
PC
W
Collector Power Dissipation
@ TC=25℃
30
TJ
Junction Temperature
150
-55~150
℃
℃
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1833
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCE(
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
80
TYP.
MAX
UNIT
V
IC= 1mA; IB= 0
IC= 50μA; IE= 0
100
5
V
IE= 50μA; IC= 0
V
IC= 4A; IB= 0.4A
1.0
1.5
10
V
)
sat
IC= 4A; IB= 0.4A
V
VBE(
)
sat
ICBO
VCB= 100V; IE= 0
VEB= 4V; IC= 0
μA
μA
IEBO
hFE
fT
Emitter Cutoff Current
10
DC Current Gain
IC= 1A; VC= 5V
60
320
Current-Gain—Bandwidth Product
Output Capacitance
IE= -0.5A; VCE= 5V
IE= 0; VCB= 10V; ftest= 1.0MHz
5
MHz
pF
COB
150
hFE Classifications
D
E
F
60-120
100-200 160-320
2
isc Website：www.iscsemi.cn
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