2SD1720F [ISC]
Transistor;
| 型号： | 2SD1720F |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1720
DESCRIPTION
·High Collector Current:: IC= 5A
·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max.)@IC= 3A
·Wide Area of Safe Operation
·Complement to Type 2SB1291
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-EmiteVoltage
Emitter-Base Voltage
VALUE
UNT
V
60
60
V
5
5
V
Collector Current-Continuous
Collector Current-Peak
A
ICM
10
A
Total Power Dissipation
@ TC=25℃
PC
40
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1720
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
60
60
5
TYP. MAX UNIT
IC= 1mA; IB= 0
V
V
V
IC= 50μA; IE= 0
IE= 50μA; IC= 0
IC= 3A; IB= 0.3A
IC= 3A; IB= 0.3A
VCB= 60V; IE= 0
VEB= 4V; IC= 0
1.0
1.5
10
V
VCE
VBE
(sat)
V
(sat)
ICBO
μA
μA
IEBO
hFE
COB
fT
Emitter Cutoff Current
10
DC Current Gain
IC= 1A; VCE= 5V
IE= 0; VCB= 10V; f= 1MHz
IE= -0.5A; VCE= 5V
100
320
Output Capacitance
130
8
pF
Current-Gain—Bandwidth Product
MHz
hFE Classifications
E
F
100-200
160-320
2
isc Website：www.iscsemi.cn
相关型号：
2SD1724-Q
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126LP, 3 PIN
ONSEMI
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