2SD1668 [ISC]
Transistor;
| 型号： | 2SD1668 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1668
DESCRIPTION
·With TO-220F package
·Complement to type 2SB1135
·Low collector saturation voltage
·Wide safe operating area
APPLICATIONS
·For relay drivers,high-speed inverters,
converters,and other general high-current
switching applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
3
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
MAX
UNIT
60
V
V
V
A
A
Open base
50
Open collector
6
7
12
ICM
Collector current-peak
Ta=25℃
TC=25℃
2
PC
Collector dissipation
W
30
Tj
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1668
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
CONDITIONS
IC=1mA ;RBE=∞
MIN
50
60
6
TYP.
MAX
UNIT
V
IC=1mA ;IE=0
IE=1mA ;IC=0
IC=4A; IB=0.4A
VCB=40V; IE=0
VEB=4V; IC=0
IC=1A ; VCE=2V
IC=5A ; VCE=2V
IC=1A ; VCE=5V
V
V
0.4
100
100
280
V
μA
μA
IEBO
Emitter cut-off current
hFE-1
DC current gain
70
30
hFE-2
DC current gain
fT
Transition frequency
10
MHz
Switching times
ton Turn-on time
ts
0.20
0.90
0.30
μs
μs
μs
IC=2.0A; IB1=-IB2=0.2A
VCC=20V;RL=10Ω
Storage time
Fall time
tf
hFE-1 Classifications
Q
R
S
70-140
100-200
140-280
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1668
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
相关型号：
2SD1671
NPN Silicon Epitaxial Darlington Transistor Low Speed High Current Switching Industrial Use
ETC
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