2SD1571 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1571 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1571
DESCRIPTION
·With TO-220Fa package
·Low collector saturation voltage
·High speed switching
·High voltage:VCBO=800V(Min)
APPLICATIONS
·High voltage switching applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
CONDITIONS
Open emitter
VALUE
UNIT
V
800
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
400
V
Open collector
5
V
3
6
A
ICM
Collector current-peak
Base current
A
IB
1.5
A
TC=25℃
Ta=25℃
30
PC
Collector power dissipation
W
2
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tj
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1571
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=10mA , IB=0
400
IC=0.5A; IB=50mA
IC=0.5A; IB=50mA
VCB=800V; IE=0
1.0
1.5
1
V
V
mA
mA
IEBO
VEB=5V; IC=0
1
hFE-1
hFE-2
fT
IC=10mA ; VCE=5V
IC=0.5A ; VCE=5V
IE=-0.1A ; VCE=10V
IE=0 ; VCB=10V;f=1MHz
8
DC current gain
10
Transition frequency
4
MHz
pF
COB
Output capacitance
75
IC=0.5A; IB1=-IB2=50mA
VCC=200V; RL=400Ω
tf
Fall time
1.0
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1571
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
相关型号：
2SD1572
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN
HITACHI
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