2SD1541 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1541 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1541
DESCRIPTION
·
·With TO-3PFa package
·High voltage ,and high reliability
·Built-in damper diode
·High speed switching
·Wide area of safe operation
APPLICATIONS
·For horizontal deflection output applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VEBO
IC
PARAMETER
Collector-base voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
1500
5
UNIT
V
Open collector
V
3
A
ICM
Collector current-peak
Base current
10
A
IBM
3.5
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
50
W
℃
℃
Tj
130
-55~130
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1541
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)EBO
VCEsat
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
IE=500mA ;IC=0
5
IC=2A ;IB=0.75A
IC=2A ;IB=0.75A
VCB=750V; IE=0
5.0
1.5
50
1
V
VBEsat
V
μA
mA
ICBO
Collector cut-off current
V
CB=1500V; IE=0
hFE
DC current gain
IC=2A ; VCE=10V
IC=-4A
4
12
2.2
VF
Diode forward voltage
V
Switching times
tstg
Storage time
3.0
7.0
μs
μs
IC=2A
IBend=0.75A;LLeak=5μH
tf
Fall time
0.75
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1541
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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