2SD1506R [ISC]
Transistor;
| 型号： | 2SD1506R |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1506
DESCRIPTION
·
·With TO-126 package
·Complement to type 2SB1065
·Low collector saturation voltage
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
60
50
V
V
V
A
A
Open base
Open collector
5
3
ICM
Collector current-peak
4.5
TC=25℃
Ta=25℃
10
PC
Collector power dissipation
W
1.2
Tj
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1506
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
50
60
5
TYP.
MAX
UNIT
V
IC=1mA ,IB=0
IC=50μA ,IE=0
IE=50μA ,IC=0
IC=2A; IB=0.2A
IC=2A; IB=0.2A
VCB=40V; IE=0
V
V
1.0
1.5
1.0
1.0
390
V
V
μA
μA
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE
DC current gain
IC=0.5A ; VCE=3V
IE=0 ; VCB=10V,f=1MHz
IC=0.5A ; VCE=5V
56
COB
Output capacitance
40
90
pF
fT
Transition frequency
MHz
hFE Classifications
N
P
Q
R
56-120
82-180
120-270 180-390
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1506
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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