2SD1266A [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1266A |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1266 2SD1266A
DESCRIPTION
·With TO-220Fa package
·High forward current transfer ratio hFE
which has satisfactory linearity
·Low collector saturation voltage
·Complement to type 2SB941/941A
APPLICATIONS
·For power amplification
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
2SD1266
2SD1266A
2SD1266
2SD1266A
60
VCBO
Collector-base voltage
Open emitter
V
80
60
VCEO
Collector-emitter voltage
Open base
V
80
VEBO
IC
Emitter-base voltage
Collector current
Open collector
6
V
A
A
3
ICM
Collector current-peak
5
2
Ta=25℃
TC=25℃
PC
Collector power dissipation
W
35
Tj
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1266 2SD1266A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
60
TYP.
MAX
UNIT
2SD1266
Collector-emitter
voltage
VCEO
IC=30mA ,IB=0
V
2SD1266A
80
VCEsat
VBE
Collector-emitter saturation voltage
Base-emitter voltage
IC=3A, IB=0.375A
IC=3A ; VCE=4V
VEB=6V; IC=0
1.2
1.8
1
V
V
IEBO
Emitter cut-off current
mA
2SD1266
Collector
VCE=30V; IB=0
ICEO
0.3
mA
mA
cut-off current
2SD1266A
V
CE=60V; IB=0
2SD1266
Collector
VCE=60V; VBE=0
ICES
0.2
cut-off current
2SD1266A
VCE=80V; VBE=0
hFE-1
hFE-2
fT
DC current gain
DC current gain
Transition frequency
IC=1A ; VCE=4V
70
10
250
IC=3A ; VCE=4V
IC=0.5A; VCE=10V,f=10MHz
30
MHz
Switching times
ton
tstg
tf
Turn-on time
0.5
2.5
0.4
μs
μs
μs
IC=1A
IB1=0.1A ,IB2=-0.1A
Storage time
Fall time
VCC=50V,
hFE-1 Classifications
Q
P
70-150
120-250
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1266 2SD1266A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1266 2SD1266A
4
相关型号：
2SD1266APQ
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220, Plastic/Epoxy, 3 Pin, SC-67, TO-220F-A1, 3 PIN
PANASONIC
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