2SD1237L [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2SD1237L
型号: 2SD1237L
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件: 总4页 (文件大小:121K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1237L  
DESCRIPTION  
·
·With TO-220C package  
·Complement to type 2SB921L  
·Low collector saturation voltage  
·Large current capacity.  
APPLICATIONS  
·Suitable for relay drivers, high-speed  
inverters,converters, and other general  
large current switching applications.  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
CONDITIONS  
VALUE  
90  
UNIT  
Open emitter  
Open base  
V
V
V
A
A
80  
Open collector  
6
Collector current (DC)  
Collector current-peak  
7
ICM  
12  
TC=25  
40  
PC  
Collector dissipation  
W
1.75  
150  
-50~150  
Tj  
Junction temperature  
Storage temperature  
Tstg  
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1237L  
CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
VCEsat  
ICBO  
PARAMETER  
Collector-emitter breakdown voltage  
Collector-base breakdown voltage  
Emitter-base breakdown voltage  
Collector-emitter saturation voltage  
Collector cut-off current  
CONDITIONS  
MIN  
80  
90  
6
TYP.  
MAX  
UNIT  
V
IC=1mA ;RBE=∞  
IC=1mA ;IE=0  
IE=1mA; IC=0  
IC=4A; IB=0.4A  
VCB=80V; IE=0  
VEB=4V; IC=0  
IC=1A ; VCE=2V  
IC=4A ; VCE=2V  
IC=1A ; VCE=5V  
V
V
0.4  
100  
100  
280  
V
μA  
μA  
IEBO  
Emitter cut-off current  
hFE-1  
DC current gain  
70  
30  
hFE-2  
DC current gain  
fT  
Transition frequency  
20  
MHz  
Switching times  
ton  
Turn-on time  
0.1  
1.6  
0.4  
μs  
μs  
μs  
IC=10IB1=-10IB2=2A  
ts  
Storage time  
Fall time  
tf  
‹ hFE-1 Classifications  
Q
R
S
70-140  
100-200  
140-280  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1237L  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)  
3
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SD1237L  
4

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