2SD1190 [ISC]
Silicon NPN Darlington Power Transistor; 硅NPN达林顿功率晶体管
| 型号： | 2SD1190 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Darlington Power Transistor |
| 文件： | 总2页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1190
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·High DC Current Gain
: hFE= 2000(Min) @IC= 2.0A
·Low Saturation Voltage
·Complement to Type 2SB880
APPLICATIONS
·Designed for motor drivers, printer hammer drivers, relay
drivers, voltage regulator applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
0
V
V
V
A
A
60
6
4
Collector Current-Continuous
Collector Current-Peak
ICP
6
Collector Power Dissipation
@ Ta=25℃
1.75
30
PC
W
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
150
-55~150
℃
℃
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1190
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
VCE(
PARAMETER
CONDITIONS
IC= 50mA; RBE= ∞
IC= 5mA; IE= 0
MIN
60
TYP.
MAX
UNIT
V
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
70
V
IC= 2A; IB= 4mA
IC= 2A; IB= 4mA
VCB= 40V; IE= 0
VEB= 5V; IC= 0
1.5
2.0
100
3.0
V
)
sat
V
VBE(
)
sat
ICBO
μA
mA
IEBO
hFE
fT
Emitter Cutoff Current
DC Current Gain
IC= 2A; VCE= 2V
IC= 2A; VC= 5
200
Current-Gain—Bandwidth Product
20
MHz
Switching times
Turn-on Time
0.6
2.7
1.6
μs
μs
μs
ton
tstg
tf
IC= 2A, IB1= -IB2= 4mA
RL= 10Ω; VCC= 20V;
PW= 50μs; Duty Cycle≤1%
Storage Time
Fall Time
2
isc Website：www.iscsemi.cn
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