2SD1186 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1186 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1185
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·High speed switching
APPLICATIONS
·Power switching applications
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
V
1200
Open base
800
V
Open collector
6
V
5
7
A
ICM
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
A
PC
TC=25℃
50
W
℃
℃
Tj
150
Tstg
-45~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1185
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)EBO
V(BR)CEO
VCEsat
VBEsat
ICES
PARAMETER
CONDITIONS
MIN
6
TYP.
MAX
UNIT
V
Emitter-base breakdown voltage
IE=10mA ;IC=0
Collector-emitter breakdown voltage IC=10mA ;RBE=∞
800
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IC=4A; IB=0.8A
IC=4A; IB=0.8A
VCE=1200V; RBE=0
VEB=6V; IC=0
5.0
1.5
0.5
0.1
30
V
V
mA
mA
IEBO
hFE
DC current gain
IC=0.3A ; VCE=5V
10
Switching times
tf
Fall time
1.0
μs
μs
IC=4A ;IB1=0.8A; IB2=-2A
ts
Storage time
1.0
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1185
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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