2SD110O [ISC]
Transistor;
| 型号： | 2SD110O |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor 局域网 开关 晶体管 |
| 文件： | 总2页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD110
DESCRIPTION
·High Power Dissipation-
: PC= 100W@TC= 25℃
·High Current Capability-
: IC = 10A
APPLICATIONS
·Designed for power amplifier , power switching ,DC-DC
converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
VALUE
130
110
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
10
V
Collector Current-Continuous
Emitter Current-Continuous
Base Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
10
A
IE
-10
A
IB
3
A
PC
100
150
-65~150
W
℃
℃
TJ
Storage Temperature
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD110
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
PARAMETER
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
110
10
TYP.
MAX
UNIT
V
IC= 50mA ; RBE= ∞
IE= 50mA ; IC= 0
IC= 5A; IB= 1A
V
1.5
2.5
0.5
10
V
VCE
(sat)
(sat)
IC= 5A; IB= 1A
V
VBE
ICBO
VCB= 50V; IE= 0
VEB= 10V; IC=0
mA
mA
IEBO
hFE-1
hFE-2
fT
Emitter Cutoff Current
DC Current Gain
IC= 1A ; VCE= 5V
IC= 5A ; VCE= 5V
IC= 1A ; VCE= 10V
IE= 0 ; VCB= 50V; f= 1MHz
30
10
300
DC Current Gain
Current-Gain—Bandwidth Product
Output Capacitance
1
MHz
pF
COB
200
hFE-2 Classifications
R
O
Y
30-90
50-150
100-300
2
isc Website：www.iscsemi.cn
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