2SD1064 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1064 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：251K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1064
DESCRIPTION
·With TO-3PN package
·Complement to type 2SB828
·Wide area of safe operation
·Low collector saturation voltage
APPLICATIONS
·Relay drivers,
·High-speed inverters,
·Converters,
·General high-current switching applications
.
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
Open emitter
VALUE
60
UNIT
V
Open base
50
V
Open collector
6
V
Collector current (DC)
Collector current -peak
Collector power dissipation
Junction temperature
Storage temperature
12
A
ICM
17
A
PC
TC=25℃
80
W
℃
℃
Tj
150
-55~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1064
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
CONDITIONS
IC=1mA ;RBE=∞
MIN
50
60
6
TYP.
MAX
UNIT
V
IC=1mA ;IE=0
IE=1mA ;IC=0
IC=6A; IB=0.3A
VCB=40V; IE=0
VEB=4V; IC=0
IC=1A ; VCE=2V
IC=5A ; VCE=2V
IC=1A ; VCE=5V
V
V
0.4
0.1
0.1
280
V
mA
mA
IEBO
Emitter cut-off current
hFE-1
DC current gain
70
30
hFE-2
DC current gain
fT
Transition frequency
10
MHz
Switching times
Turn-on time
0.1
0.05
1.2
μs
μs
μs
ton
tstg
tf
IC=5.0A; IB1=-IB2=0.5A
VCC=20V;RL=4Ω
Storage time
Fall time
hFE-1 Classifications
Q
R
S
70-140
100-200
140-280
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1064
PACKAGE OUTLINE
Fig.2 outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1064
4
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