2SC4907 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC4907 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4907
DESCRIPTION
·With TO-220F package
·High voltage.
·High speed switching
APPLICATIONS
·For switching regulator and general
purpose applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
3
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
600
500
10
UNIT
V
Open base
V
Open collector
V
6
A
ICM
Collector current-peak
Base current
12
A
IB
2
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
30
W
℃
℃
Tj
150
-55~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4907
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=25mA ; IB=0
500
IC=2A ;IB=0.4A
0.5
1.3
1
V
IC=2A ;IB=0.4A
V
VCB=600V; IE=0
VEB=10V; IC=0
mA
μA
IEBO
100
30
hFE
DC current gain
IC=2A ; VCE=4V
IE=0; VCB=10V;f=1MHz
IE=-0.5A ; VCE=12V
10
COB
Output capacitance
45
8
pF
fT
Transition frequency
MHz
Switching times
ton
Turn-on time
1.0
4.5
0.5
μs
μs
μs
IC=2A; IB1=0.2A
IB2=-0.4A
VCC=200V ,RL=100Ω
ts
Storage time
Fall time
tf
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4907
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4907
4
相关型号：
2SC4908
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
SANKEN
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