2SC4511O [ISC]
暂无描述;
| 型号： | 2SC4511O |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | 暂无描述 晶体 晶体管 放大器 局域网 |
| 文件： | 总4页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4511
DESCRIPTION
·With TO-220F package
·Complement to type 2SA1725
APPLICATIONS
·Audio and general purpose
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
3
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
V
120
Open base
80
V
Open collector
6
V
6
3
A
IB
Base current
A
PC
Collector dissipation
Junction temperature
Storage temperature
TC=25℃
30
W
℃
℃
Tj
150
Tstg
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4511
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
IC=25mA ; IB=0
MIN
TYP.
MAX
UNIT
V
80
IC=2A; IB=0.2A
0.5
10
V
VCB=120V; IE=0
VEB=6V; IC=0
μA
μA
IEBO
10
hFE
DC current gain
IC=2A ; VCE=4V
IE=0; VCB=10V;f=1MHz
IE=-0.5A ; VCE=12V
50
180
COB
Output capacitance
110
20
pF
fT
Transition frequency
MHz
Switching times
ton Turn-on time
ts
0.16
2.60
0.34
μs
μs
μs
IC=3.0A IB1=-IB2=0.3A
VCC=30V ,RL=10Ω
Storage time
Fall time
tf
hFE Classifications
O
P
Y
50-100
70-140
90-180
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4511
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4511
4
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