2SC4163L [ISC]
Transistor;
| 型号： | 2SC4163L |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4163
DESCRIPTION
·With TO-220F package
·High breakdown voltage.
·High reliability.
·Fast switching speed
·Wide area of safe operation
APPLICATIONS
·Switching regulator applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
3
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
V
500
Open base
400
V
Open collector
7
12
V
A
ICM
Collector current-peak
Base current
25
A
IB
4
A
TC=25℃
40
PC
Collector dissipation
W
2
Tj
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4163
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
IC=10mA ; RBE=∞
MIN
400
500
7
TYP.
MAX
UNIT
V
IC=1mA ; IE=0
V
IE=1mA ; IC=0
V
IC=8A ;IB=1.6A
0.8
1.5
10
V
IC=8A ;IB=1.6A
V
VCB=400V; IE=0
VEB=5V; IC=0
μA
μA
IEBO
10
hFE-1
DC current gain
IC=1.6A ; VCE=5V
IC=8A ; VCE=5V
IC=10mA ; VCE=5V
IE=0; VCB=10V;f=1MHz
IC=1.6A ; VCE=10V
15
10
10
50
hFE-2
DC current gain
hFE-3
DC current gain
COB
Output capacitance
160
20
pF
fT
Transition frequency
MHz
Switching times
ton Turn-on time
ts
0.5
2.5
0.3
μs
μs
μs
IC=10A; IB1=2A
IB2=-4A
VCC=200V ,RL=20Ω
Storage time
Fall time
tf
hFE-1 Classifications
L
M
N
15-30
20-40
30-50
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4163
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4163
4
相关型号：
2SC4166/N
Small Signal Bipolar Transistor, 0.1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92L, 3 PIN
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2SC4166/NP
Small Signal Bipolar Transistor, 0.1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92L, 3 PIN
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