2SC4139 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC4139 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4139
DESCRIPTION
·With TO-3PN package
·High voltage
·High speed switching
APPLICATIONS
·For switching regulator and general
purpose applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
500
400
10
UNIT
V
Open base
V
Open collector
V
15
A
ICP
Collector current-pulse
Base current
30
A
IB
5
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
120
150
-55~150
W
℃
℃
Tj
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4139
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
TYP. MAX UNIT
IC=25mA ; IB=0
400
V
IC=8A; IB=1.6A
IC=8A; IB=1.6A
VCB=500V ;IE=0
VEB=10V; IC=0
0.5
1.3
100
100
30
V
V
μA
μA
IEBO
Emitter cut-off current
hFE
DC current gain
IC=8A ; VCE=4V
IE=-1.5A ; VCE=12V
f=1MHz ; VCB=10V
10
fT
Transition frequency
10
85
MHz
pF
COB
Collector output capacitance
Switching times
Turn-on time
1.0
3.0
0.5
μs
μs
μs
ton
tstg
tf
IC=8A;IB1=0.8A;
IB2=-1.6A;RL=25Ω
VCC=200V
Storage time
Fall time
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4139
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4139
4
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