2SC3896 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC3896 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3896
DESCRIPTION
·With TO-3PML package
·High speed
·High breakdown voltage
·High reliability
APPLICATIONS
·Ultrahigh-definition CRT display horizontal
deflection output applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
3
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
MAX
1500
800
6
UNIT
V
V
V
A
A
Open base
Open collector
8
ICM
Collector current-peak
25
Ta=25℃
TC=25℃
3.0
PC
Collector dissipation
W
70
Tj
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3896
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.1A ;IB=0
Collector-emitter saturation voltage IC=6A ;IB=1.5A
800
5.0
1.5
10
V
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=6A ;IB=1.5A
VCB=800V ;IE=0
VCE=1500V; RBE=0
VEB=4V ;IC=0
V
μA
mA
mA
ICES
1.0
1.0
IEBO
hFE-1
IC=1A ; VCE=5V
IC=6A ; VCE=5V
8
4
hFE-2
DC current gain
8
Switching times
tstg
Storage time
3.0
0.2
μs
μs
IC=6A ; VCC=200V
IB1=1.2A; IB2=2.4A
RL=33.3Ω
tf
Fall time
0.1
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3896
PACKAGE OUTLINE
Fig.2 outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3896
4
相关型号：
2SC3900-TB
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
ONSEMI
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