2SC3690M [ISC]
Transistor;
| 型号： | 2SC3690M |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3690
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC= 3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 60V (Min)
·High Switching Speed
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
100
60
V
7
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
3
6
A
ICM
A
IB
1.5
A
Collector Power Dissipation
@ TC=25℃
15
PC
W
Collector Power Dissipation
@ Ta=25℃
2
TJ
Junction Temperature
150
-55~150
℃
℃
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3690
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(sat)-1
VCE(sat) -2
VBE(sat) -1
VBE(sat) -2
ICBO
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
IC= 2A; IB= 0.2A, L= 1mH
IC= 2A; IB= 0.1A
MIN
TYP.
MAX
UNIT
V
60
0.3
0.5
1.2
1.5
10
V
IC= 3A; IB= 0.15A
IC= 2A; IB= 0.1A
V
V
IC= 3A; IB= 0.15A
VCB= 60V; IE= 0
V
μA
VCE= 60V; VBE= -1.5V
Ta=125℃
10
1.0
μA
mA
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
10
μA
hFE-1
DC Current Gain
IC= 0.3A ; VCE= 2V
IC= 0.6A ; VCE= 2V
IC= 2A ; VCE= 2V
100
100
60
hFE-2
DC Current Gain
200
400
hFE-3
DC Current Gain
hFE-2 classifications
M
L
K
100-200 150-300 200-400
2
isc Website：www.iscsemi.cn
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