2SC3571 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC3571 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3571
DESCRIPTION
·
·With TO-220Fa package
·Low collector saturation voltage
·High switching speed
APPLICATIONS
·Switching regulator
·DC-DC converter
·High frequency power amplifier
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
3
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
CONDITIONS
Open emitter
VALUE
500
400
7
UNIT
V
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Open base
V
Open collector
V
7
A
ICM
15
A
IB
3.5
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
30
W
℃
℃
150
-55~150
Tj
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3571
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=3.0A , IB=0.6A,L=1mH
Collector-emitter saturation voltage IC=3A; IB=0.6A
400
1.0
1.2
10
V
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=3A; IB=0.6A
VCB=400V; IE=0
V
μA
V
CE=400V; VBE=-1.5V
Ta=125℃
10
1.0
μA
mA
ICEX
IEBO
VEB=5V; IC=0
10
80
80
μA
hFE-1
IC=0.1A ; VCE=5V
IC=1A ; VCE=5V
IC=3A ; VCE=5V
20
20
10
hFE -2
DC current gain
hFE -3
DC current gain
Switching times
Turn-on time
1.0
2.5
1.0
μs
μs
μs
ton
IC=3.0A;IB1=-IB2=0.6A
Storage time
Fall time
ts
VCC≈150V; RL=50Ω
tf
hFE-2 classifications
M
L
K
20-40
30-60
40-80
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3571
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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