2SC3519AO [ISC]
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| 型号： | 2SC3519AO |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | 暂无描述 晶体 晶体管 |
| 文件： | 总2页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
2SC3519/A
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
V(BR)CEO= 160V(Min)-2SC3519
= 180V(Min)-2SC3519A
·Good Linearity of hFE
·Complement to Type 2SA1386/A
APPLICATIONS
·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
160
18
160
180
5
UNIT
2SC3519
2SC3519A
2SC3519
2SC3519A
Collector-Base
VCBO
V
Voltage
Collector-Emtter
Voltage
VCEO
V
VEBO
Emitter-Base Voltage
V
A
IC
Collector Current-Continuous
Base Current-Continuous
15
IB
4
A
Collector Power Dissipation
@ TC=25℃
PC
TJ
130
150
-55~150
W
℃
℃
Junction Temperature
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
2SC3519/A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
160
180
TYP. MAX UNIT
2SC3519
Collector-Emitter
Breakdown Voltage
V(BR)CEO
IC= 25mA ; IB= 0
V
2SC3519A
Collector-Emitter Saturation Voltage
IC= 5.0A; IB= 0.5A
VCB= 160V; IE= 0
2.0
100
100
100
180
V
VCE
(sat)
2SC3519
Collector
Cutoff Current
ICBO
μA
μA
2SC3519A
VCB= 180V; IE= 0
IEBO
hFE
COB
fT
Emitter Cutoff Current
DC Current Gain
VEB= 5V; IC= 0
IC= 5A ; VCE= 4V
50
Output Capacitance
250
50
pF
I= 0; VCB= 10Vftest1.0MHz
IE= -2A ; VCE= 12V
Current-Gain—Bandwidth Product
MHz
Switching Times
Turn-on Time
0.2
1.3
μs
μs
μs
ton
tstg
tf
IC= 10A ,RL= 4Ω,
IB1= -IB2= 1A,VCC= 40V
Storage Time
Fall Time
0.45
hFE Classifications
O
P
Y
50-100
70-140
90-180
2
isc Website：www.iscsemi.cn
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