2SC3450 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SC3450 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3450
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 500V(Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
VALUE
800
500
7
UNIT
V
V
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
10
A
ICM
20
A
IB
3
A
Collector Power Dissipation
@ TC=25℃
PC
90
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3450
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
800
500
7
TYP. MAX UNIT
IC= 1mA; IE= 0
V
V
V
IC= 5mA; RBE= ∞
IE= 1m A; IC= 0
IC= 4A; IB= 0.8A
1.0
1.5
10
V
VCE
VBE
(sat)
IC= 4A; IB= 0.8A
V
(sat)
ICBO
VCB= 500V; IE= 0
VEB= 5V; IC= 0
μA
μA
IEBO
hFE-1
hFE-2
fT
Emitter Cutoff Current
10
DC Current Gain
IC= 0.8A; VCE= V
C= 4A; VCE= 5V
15
8
50
DC Current Gain
Current-Gain—Bandwidth Product
Output Capacitance
IC= 0.8A; VCE= 10V
IE= 0; VCB= 10V; ftest= 1.0MHz
18
MHz
pF
COB
120
Switching Times
Turn-on Time
0.5
3.0
0.3
μs
μs
μs
ton
tstg
tf
IC= 5A, IB1= 1A; IB2= -2A
RL= 40Ω; VCC= 200V
Storage Time
Fall Time
hFE-1 Classifications
L
M
N
15-30
20-40
30-50
2
isc Website：www.iscsemi.cn
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