2SC2902 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC2902 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2902
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor controls
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
3
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
MAX
800
400
9
UNIT
V
Open emitter
Open base
V
Open collector
V
15
A
ICM
Collector current-Peak
Collector power dissipation
Junction temperature
Storage temperature
30
A
PC
TC=25℃
150
200
-65~200
W
℃
℃
Tj
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2902
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
400
9
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.1A ; IB=0; L=25mH
Emitter-base breakdown voltage
IE=1mA; IC=0
V
Collector-emitter saturation voltage IC=7.5A; IB=2.5A
1.0
1.5
50
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=7.5A; IB=2.5A
VCB=640V; IE=0
VEB=9V; IC=0
V
μA
μA
IEBO
50
hFE
IC=7.5A ; VCE=5V
10
35
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2902
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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