2SC2809 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC2809 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2809
DESCRIPTION
·With TO-3PN package
·High speed switching
·High breakdown voltage
·Wide area of safe operation
APPLICATIONS
·For power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
UNIT
V
Open emitter
Open base
300
300
V
Open collector
6
V
2
4
A
ICM
Collector current-Peak
Collector power dissipation
Junction temperature
Storage temperature
A
PC
TC=25℃
50
W
℃
℃
150
Tj
-55~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2809
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
300
300
TYP.
MAX
UNIT
V
IC=10mA ;IB=0
IC=1mA ;IE=0
V
IC=1.5A; IB=0.3A
IC=1.5A; IB=0.3A
VCB=300V IE=0
VEB=6V; IC=0
1.0
1.5
V
VCE
VBE
(sat)
V
(sat)
ICBO
100
100
μA
μA
IEBO
hFE
fT
Emitter cut-off current
DC current gain
IC=0.3A ; VCE=4V
IC=0.3A ; VCE=12V
50
Transition frequency
20
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2809
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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