2SC2565O [ISC]
Transistor;
| 型号： | 2SC2565O |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2565
DESCRIPTION
·
·With MT-200 package
·Complement to type 2SA1095
·High transition frequency
APPLICATIONS
·For power amplifier applications
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (MT-200) and symbol
3
Emitter
Absolute maximum ratings (Ta=25°C)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
160
UNIT
V
Open base
160
V
Open collector
5
V
15
A
IB
Base current
1.5
A
PC
Collectorl power dissipation
Junction temperature
Storage temperature
TC=25℃
150
W
℃
℃
Tj
150
Tstg
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2565
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
VCEsat
VBE
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
160
5
TYP.
MAX
UNIT
V
IC=0.1A; IB=0
IE=10mA; IC=0
V
IC=5 A; IB=0.5 A
IC=5A ; VCE=5V
VCB=160V; IE=0
VEB=5V; IC=0
2.0
2.0
50
V
V
ICBO
μA
μA
IEBO
50
hFE-1
DC current gain
IC=1A ; VCE=5V
IC=5A ; VCE=5V
IC=1A ; VCE=10V
IE=0; VCB=10V;f=1MHz
55
40
240
hFE-2
DC current gain
fT
Transition frequency
80
MHz
pF
COB
Output capacitance
200
hFE-1 classifications
R
O
Y
55-110
80-160
120-240
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2565
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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