2SC1755 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC1755 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1755
DESCRIPTION
·With TO-220 package
·High breakdown voltage
APPLICATIONS
·For TV chroma,video ,audio
output applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
Open emitter
VALUE
300
300
7
UNIT
V
V
V
A
A
Open base
Open collector
Collector current (DC)
Collector current-peak
0.2
ICM
0.7
Ta=25℃
TC=25℃
1.2
PC
Collector power dissipation
W
15
Tj
Junction temperature
Storage temperature
150
-40~150
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1755
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=1mA ;IB=0
300
IC=50mA ;IB=5mA
VCB=200V ;IE=0
VEB=5V; IC=0
2.0
0.1
0.1
200
V
μA
μA
IEBO
Emitter cut-off current
hFE
DC current gain
IC=10mA ; VCE=10V
IC=10mA ; VCE=30V
f=1MHz;VCB=50V
40
50
fT
Transition frequency
MHz
pF
COB
Collector output capacitance
5.3
hFE classifications
C
D
E
40-80
60-120
100-200
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1755
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1755
4
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