2SC1723 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC1723 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1723
DESCRIPTION
·
·With TO-220C package
·High breakdown voltage
·High transition frequency
APPLICATIONS
·Low frequency high voltage
power amplifier
·TV power supply driver
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
300
UNIT
V
Open emitter
Open base
300
V
Open collector
5
V
0.2
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
15
W
℃
℃
Tj
150
Tstg
-45~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1723
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBE
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
CONDITIONS
MIN
300
300
5
TYP.
MAX
UNIT
V
IC=5mA ; RBE=∞
IC=100μA ; IE=0
V
IE=100μA ; IC=0
V
IC=100mA; IB=10mA
IC=50m A ; VCE=10V
VCB=250V ;IE=0
0.32
0.66
1.5
0.9
0.1
2
V
V
ICBO
Collector cut-off current
μA
μA
ICEO
Collector cut-off current
VCE=250V; RBE=∞
IC=50m A ; VCE=10V
IC=30m A ; VCE=20V
IE=0 ; VCB=50V; f=1MHz
hFE
DC current gain
40
200
fT
Transition frequency
60
MHz
pF
COB
Output capacitance
6.2
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1723
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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