2SB600 [ISC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SB600 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB600
DESCRIPTION
·With TO-3 package
·High power dissipations
·Complement to type 2SD555
APPLICATIONS
·For use in audio and power
amplifier applications
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITNS
VALUE
-200
-200
-5
UNIT
V
Open emitter
Open base
V
Open collector
V
-10
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
200
W
℃
℃
Tj
150
Tstg
-55~200
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB600
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
-200
-5
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-25mA ;IB=0
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IE=-1mA ;IC=0
V
IC=-10A; IB=-1A
IC=-10A; IB=-1A
VCB=-200V; IE=0
VEB=-5V; IC=0
-1.5
-2.0
-0.1
-0.1
V
V
mA
mA
IEBO
hFE
DC current gain
IC=-2A ; VCE=-5V
IC=-0.5A ; VCE=-10V
20
4
fT
Transition frequency
MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB600
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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