2SB551

更新时间:2024-09-18 08:00:56
品牌:ISC
描述:Silicon PNP Power Transistors

2SB551 概述

Silicon PNP Power Transistors 硅PNP功率晶体管

2SB551 数据手册

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INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistors  
2SB551  
DESCRIPTION  
·Low Collector Saturation Voltage-  
: VCE(sat)= -1.2V(Typ.)@IC= -2A  
·High Power Dissipation-  
: PC= 25W(Max)@TC=55℃  
APPLICATIONS  
·Designed for low frequency power amplifier applications.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
-50  
UNIT  
V
-50  
V
-4  
V
Collector Current-Continuous  
-3  
A
Collector Power Dissipation  
@TC= 25  
PC  
25  
W
TJ  
Junction Temperature  
Storage Temperature  
150  
-45~150  
Tstg  
isc Websitewww.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Power Transistors  
2SB551  
ELECTRICAL CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
PARAMETER  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
CONDITIONS  
IC= -50mA; RBE= ∞  
IC= -5mA; IE= 0  
MIN  
-50  
-50  
-4  
TYP.  
MAX  
UNIT  
V
V
IE= -5mA; IC= 0  
V
IC= -2A; IB= -0.2A  
IC= -1A; VCE= -4V  
VCB= -20V; IE= 0  
1.2  
1.5  
V
VCE  
(sat)  
(on)  
V
VBE  
ICBO  
Collector Cutoff Current  
-0.1  
200  
mA  
hFE-1  
hFE-2  
fT  
DC Current Gain  
IC= -1A; VCE= -4V  
I= -0.1A; VCE= -4V  
IC= -0.5A; VCE= -4V  
35  
35  
15  
DC Current Gain  
Current-Gain—Bandwidth Product  
MHz  
‹ hFE-1 Classifications  
A
B
C
35-70  
60-120  
100-200  
isc Websitewww.iscsemi.cn  

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