2SB1370 [ISC]
isc Silicon PNP Power Transistor; ISC的硅PNP功率晶体管
| 型号： | 2SB1370 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon PNP Power Transistor |
| 文件： | 总2页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SB1370
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -0.3V(Typ.)@IC= -2A
·Good Linearity of hFE
·Wide Area of Safe Operation
APPLICATIONS
·Designed for power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
-60
V
V
V
A
A
-60
-5
Collector Current-Continuous
Collector Current-Peak
-3
ICM
-6
Collector Power Dissipation
@ Ta=25℃
2
PC
W
Collector Power Dissipation
@ TC=25℃
30
TJ
Junction Temperature
150
-55~150
℃
℃
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SB1370
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
-60
-60
-5
TYP. MAX UNIT
IC= -1mA; IB= 0
V
V
V
IC= -50μA; IE= 0
IE= -50μA; IC= 0
IC= -2A; IB= -0.2A
-1.5
-1.5
-10
V
VCE
VBE
(sat)
IC= -2A; IB= -0.2A
V
(sat)
ICBO
VCB= -60V; IE= 0
μA
μA
IEBO
hFE
COB
fT
Emitter Cutoff Current
VEB= -4V; IC= 0
-10
DC Current Gain
IC= -0.5A; VCE= 5V
E= 0; VCB= -10V; ftest= 1MHz
IC=-0.5A; VCE= -5V; ftest= 5MHz
100
320
Output Capacitance
80
15
pF
Current-Gain—Bandwidth Product
MHz
hFE Classifications
E
F
100-200
160-320
2
isc Website：www.iscsemi.cn
相关型号：
2SB1370/D
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN
ROHM
2SB1370/DE
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN
ROHM
2SB1370/DF
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN
ROHM
2SB1370/EF
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN
ROHM
2SB1370C7/D
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN
ROHM
2SB1370C7/DF
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN
ROHM
2SB1370C7/E
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN
ROHM
2SB1370C7/F
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明