2SB1362

更新时间:2024-09-18 07:58:11
品牌:ISC
描述:Silicon PNP Power Transistors

2SB1362 概述

Silicon PNP Power Transistors 硅PNP功率晶体管 其他晶体管

2SB1362 规格参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Is Samacsys:NBase Number Matches:1

2SB1362 数据手册

通过下载2SB1362数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SB1362  
DESCRIPTION  
·With TO-3PN package  
·Wide area of safe operation  
·Complement to type 2SD2053  
APPLICATIONS  
·For high power amplifier applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-3PN) and symbol  
3
Emitter  
Absolute maximum ratings(Tc=25)  
SYMBO
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
CONDITIONS  
Open emitter  
VALU
-150  
-150  
-5  
UNIT  
V
Open base  
V
Open collector  
V
Collector current (DC)  
Collector current -peak  
Collector power dissipation  
Junction temperature  
Storage temperature  
-9  
A
ICM  
-15  
A
PC  
TC=25  
100  
W
Tj  
150  
Tstg  
-55~150  
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SB1362  
CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
V(BR)CEO  
VCEsat  
VBE  
PARAMETER  
Collector-emitter breakdown voltage  
Collector-emitter saturation voltage  
Base-emitter on voltage  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
CONDITIONS  
MIN  
TYP.  
MAX  
UNIT  
V
IC=-25mA; IB=0  
-150  
IC=-7A; IB=-0.7A  
IC=-7A;VCE=-5V  
VCB=-150V; IE=0  
VEB=-5V; IC=0  
-2.0  
-1.8  
-50  
-50  
V
V
ICBO  
μA  
μA  
IEBO  
hFE-1  
hFE-2  
hFE-3  
fT  
IC=-20mA ; VCE=-5V  
IC=-1A ; VCE=-5V  
IC=-7A ; VCE=-5V  
IC=-0.5A ; VCE=-5V  
f=1MHz;VCB=-10V  
20  
60  
15  
DC current gain  
200  
DC current gain  
Transition frequency  
15  
MHz  
pF  
COB  
Collector output capacitance  
270  
‹ hFE-2 Classifications  
Q
P
60-120  
100-200  
2
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SB1362  
PACKAGE OUTLINE  
Fig.2 outline dimensions  
3

2SB1362 相关器件

型号 制造商 描述 价格 文档
2SB1362P PANASONIC Power Bipolar Transistor, 9A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TOP3, 3 PIN 获取价格
2SB1362Q PANASONIC Power Bipolar Transistor, 9A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TOP3, 3 PIN 获取价格
2SB1362S PANASONIC Power Bipolar Transistor, 9A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TOP3, 3 PIN 获取价格
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2SB1366 SAVANTIC Silicon PNP Power Transistors 获取价格
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2SB1366 SWST 功率三极管 获取价格
2SB1366F-O MCC PNP Silicon Power Transistors 获取价格
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