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2SB1339 [ISC]

Silicon PNP Power Transistors; 硅PNP功率晶体管
2SB1339
型号： 2SB1339
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

Silicon PNP Power Transistors
硅PNP功率晶体管

晶体 晶体管 放大器 局域网
文件： 总3页 (文件大小：96K)
中文：  中文翻译
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Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SB1339  
DESCRIPTION  
·With TO-220C package  
·High DC current gain  
·Low saturation voltage  
·DARLINGTON  
APPLICATIONS  
·For low frequency power amplifier and  
power driver applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
3
Absolute maximum ratings(Ta=25℃)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector -emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
-120  
-120  
-6  
UNIT  
Open emitter  
Open base  
V
V
V
A
A
Open collector  
-6  
ICM  
Collector current-peak  
-10  
Ta=25℃  
TC=25℃  
2
PC  
Collector power dissipation  
W
40  
Tj  
Junction temperature  
Storage temperature  
150  
-55~150  
℃
℃
Tstg  
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SB1339  
CHARACTERISTICS  
Tj=25℃ unless otherwise specified  
SYMBOL  
V(BR)CEO  
V(BR)CBO  
VCEsat  
ICBO  
PARAMETER  
Collector-emitter breakdown voltage  
Collector-base breakdown voltage  
Collector-emitter saturation voltage  
Collector cut-off current  
Emitter cut-off current  
CONDITIONS  
MIN  
-120  
-120  
TYP.  
MAX  
UNIT  
V
IC=-5mA; IB=0  
IC=-50μA; IE=0  
V
IC=-3A ;IB=-6mA  
VCB=-120V; IE=0  
VEB=-5V; IC=0  
-1.5  
-100  
-3.0  
V
μA  
mA  
IEBO  
hFE  
DC current gain  
IC=-2A ; VCE=-3V  
IC=-0.5A ; VCE=-5V  
IE=0 ; VCB=-10V;f=1MHz  
2000  
20000  
fT  
Transition frequency  
12  
70  
MHz  
pF  
COB  
Output capacitance  
2
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2SB1339  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm)  
3

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