2SB1289 [ISC]
isc Silicon PNP Power Transistor; ISC的硅PNP功率晶体管
| 型号： | 2SB1289 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon PNP Power Transistor |
| 文件： | 总2页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SB1289
DESCRIPTION
·High Collector Current:: IC= -7A
·Low Collector Saturation Voltage
: VCE(sat)= -1.0V(Max)@IC= -4A
·Wide Area of Safe Operation
·Complement to Type 2SD1580
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-EmiteVoltage
Emitter-Base Voltage
VALUE
-80
UNT
V
-80
V
-5
V
Collector Current-Continuous
Collector Current-Peak
-7
A
ICM
-10
A
Total Power Dissipation
@ TC=25℃
PC
40
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SB1289
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
-80
-80
-5
TYP.
MAX
UNIT
V
IC= -1mA; IB= 0
IC= -50μA; IE= 0
IE= -50μA; IC= 0
IC= -4A; IB= -0.4A
IC= -4A; IB= -0.4A
VCB= -80V; IE= 0
VEB= -4V; IC= 0
V
V
-1.0
-1.5
-10
V
VCE
VBE
(sat)
V
(sat)
ICBO
μA
μA
IEBO
hFE
COB
fT
Emitter Cutoff Current
-10
DC Current Gain
IC= -1A; VCE= -V
E=0; VCB= -10V; f= 1MHz
IE= 0.5A; VCE= -5V
60
320
Output Capacitance
200
12
pF
Current-Gain—Bandwidth Product
MHz
hFE Classifications
D
E
F
60-120
100-200 160-320
2
isc Website：www.iscsemi.cn
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