2SA985AP [ISC]
Transistor;
| 型号： | 2SA985AP |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA985 2SA985A
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2275/2275A
·High breakdown voltage
APPLICATIONS
·For low frequency and high frequency
power amplifer applicatons
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-220) and symbol
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALU
-120
-150
-120
-150
-5
UNIT
2SA985
2SA985A
2SA985
2SA985A
VCBO
Collector-base voltage
Open emitter
V
VCEO
Collector-emitter voltage
Open base
V
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Collector current-peak
Base current
Open collector
V
A
A
A
-1.5
-3.0
-0.3
Ta=25℃
TC=25℃
1.5
PT
Total power dissipation
W
25
Tj
Junction temperature
Storage temperature
150
℃
℃
Tstg
-55~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA985 2SA985A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-120
-150
TYP.
MAX
UNIT
2SA985
Collector-emitter
breakdown voltage
V(BR)CEO
IC=-25mA ,IB=0
V
2SA985A
VCEsat
VBEsat
ICBO
IEBO
hFE-1
hFE-2
COB
fT
Collector-emitter saturation voltage IC=-1A; IB=-0.1A
-0.3
-0.9
-2.0
-1.5
-1.0
-1.0
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-1A; IB=-0.1A
V
VCB=-120V; IE=0
μA
μA
VEB=-3V; IC=0
IC=-5mA ; VCE=-5V
IC=-0.3A ; VCE=-5V
IE=0 ; VCB=-10V,f=1MHz
IC=-0.2A ; VCE=-5V
35
60
DC current gain
150
29
320
Output capacitance
Transition frequenc
pF
180
MHz
hFE-2 Classifications
R
Q
P
60-120
100-200 160-320
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA985 2SA985A
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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RENESAS
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