概述
规格参数
数据手册2SA839O 概述
Transistor 其他晶体管
2SA839O 规格参数
| 生命周期： | Contact Manufacturer | 包装说明： | , |
| Reach Compliance Code： | unknown | 风险等级： | 5.61 |
| Base Number Matches： | 1 |
2SA839O 数据手册
通过下载2SA839O数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA839
DESCRIPTION
·With TO-220 package
·Complement to type 2SC1669
·High breakdown voltage
APPLICATIONS
·Audio power amplifier applications
·Driver stage amplifier applications
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-220) and symbol
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
-150
-150
-5
UNIT
V
Open emitter
Open base
V
Open collector
V
-1.5
A
IE
Emitter current
1.5
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
25
W
℃
℃
Tj
150
Tstg
-55~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA839
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
VCEsat
VBE
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
-150
-5
TYP.
MAX
UNIT
V
IC=-10mA ,IB=0
IE=-1mA ,IC=0
V
IC=-0.5A; IB=-50mA
IC=-0.5A ; VCE=-10V
VCB=-100V; IE=0
-1.5
-1.0
-20
V
V
ICBO
μA
μA
IEBO
VEB=-5V; IC=0
-10
hFE-1
DC current gain
IC=-0.5A ; VCE=-10V
IC=-1A ; VCE=-10V
IE=0 ; VCB=-10V;f=1MHz
IC=-0.5A ; VCE=-10V
40
20
240
hFE-2
DC current gain
COB
Output capacitance
100
6
pF
fT
Transition frequency
MHz
hFE-1 Classifications
R
O
Y
40-80
70-140
120-240
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA839
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SA839O 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SA839Y | ISC | Transistor | 获取价格 |
|
| 2SA841 | ETC | SILICON PNP EPITAXIAL TRANSISTOR(PCT PROCESS) | 获取价格 |
|
| 2SA843 | NJSEMI | Trans GP BJT PNP 55V 0.1A 3-Pin TO-92 | 获取价格 |
|
| 2SA844 | HITACHI | Silicon PNP Epitaxial | 获取价格 |
|
| 2SA844 | TRSYS | Plastic-Encapsulated Transistors | 获取价格 |
|
| 2SA844 | RENESAS | Silicon PNP Epitaxial | 获取价格 |
|
| 2SA844 | SECOS | PNP Plastic Encapsulated Transistor | 获取价格 |
|
| 2SA844 | WINNERJOIN | TRANSISTOR (PNP) | 获取价格 |
|
| 2SA844 | CJ | TO-92 | 获取价格 |
|
| 2SA844 | FOSHAN | TO-92 | 获取价格 |
|
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