2SA1789 [ISC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SA1789 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1789
DESCRIPTION
·
·With TO-247 package
·Complement to type 2SC4653
·Low collector saturation voltage
APPLICATIONS
·For audio output applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
-60
UNIT
V
Open emitter
Open base
-60
V
Open collector
-5
V
-12
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
80
W
℃
℃
Tj
150
Tstg
-55~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1789
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
PARAMETER
CONDITIONS
MIN
-60
-60
-5
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=-25mA; IB=0
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=-1mA; IE=0
IE=-1mA; IC=0
IC=-6A;IB=-0.6 A
IC=-6A;IB=-0.6 A
VCB=-60V; IE=0
VEB=-5V; IC=0
IC=-2A ; VCE=-2V
V
V
-0.5
-2.0
-10
V
V
ICBO
μA
μA
IEBO
Emitter cut-off current
-10
hFE
DC current gain
60
320
hFE classifications
D
E
F
60-120
100-200 160-320
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1789
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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