2SA1306Y [ISC]
Transistor;
| 型号： | 2SA1306Y |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
2SA1306/A/B
DESCRIPTION
·Good Linearity of hFE
·High Collector-Emitter Breakdown Voltage-
V
(BR)CEO= -160V(Min)-2SA1306
= -180V(Min)-2SA1306A
= -200V(Min)-2SA1306B
·Complement to Type 2SC3298/A/B
APPLICATIONS
·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
-160
-180
-200
-160
-180
-200
-5
UNIT
2SA1306
Collector-Base
Voltage
VCBO
V
2SA1306A
2SA1306B
2SA1306
Collector-Emitter
Voltage
VCEO
V
2SA1306A
2SA1306B
VEBO
Emitter-Base Voltage
V
A
IC
Collector Current-Continuous
Base Current-Continuous
-1.5
IB
-0.15
20
A
Collector Power Dissipation
@ TC=25℃
PC
TJ
W
℃
℃
Junction Temperature
150
Storage Temperature Range
-55~150
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
2SA1306/A/B
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCE(
PARAMETER
CONDITIONS
MIN
-160
-180
-200
TYP.
MAX
UNIT
2SA1306
Collector-Emitter
Breakdown Voltage
IC= -10mA; IB= 0
V
2SA1306A
2SA1306B
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
IC= -500mA; IB= -50mA
IC= -500mA; VCE= -5V
VCB= -160V; IE= 0
-1.5
-1.0
-1.0
-1.0
240
V
)
sat
V
VBE(
)
on
ICBO
μA
μA
IEBO
hFE
fT
VEB= -5V; IC=0
DC Current Gain
IC= -100mA ; VCE= -5V
IC= -100mA ; VCE= -10V
IE= 0 ; VCB= -10V;ftest= 1.0MHz
70
Current-Gain—Bandwidth Product
Output Capacitance
100
30
MHz
pF
COB
hFE Classifications
O
Y
70-140
120-240
2
isc Website：www.iscsemi.cn
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