2SA1232Q [ISC]
Transistor;
| 型号： | 2SA1232Q |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1232
DESCRIPTION
·With TO-3PFa package
·Complement to type 2SC3012
APPLICATIONS
·Audio frequency power amplifier.
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
-130
-130
-5
UNIT
V
Open emitter
Open base
V
Open collector
V
-10
A
ICM
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
-15
A
PC
TC=25℃
100
W
℃
℃
Tj
150
Tstg
-55~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1232
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
-0.6
-1.3
MAX
-1.5
-2.0
-50
UNIT
V
Collector-emitter saturation voltage IC=-5A; IB=-0.5A
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-5A; IB=-0.5A
VCB=-130V; IE=0
VEB=-3V; IC=0
V
μA
μA
IEBO
-50
hFE-1
hFE-2
Cob
IC=-2A ; VCE=-5V
IC=-5A ; VCE=-5V
IE=0 ; VCB=-10V;f=1MHz
IC=-1A ; VCE=-5V
60
40
320
DC current gain
Output capacitance
Transition frequency
250
60
pF
fT
MHz
hFE-1 Classifications
R
Q
P
60-120
100-200
160-320
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1232
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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