2SA1205 [ISC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SA1205 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1205
DESCRIPTION
·With TO-3PN package
·High power dissipation
APPLICATIONS
·For general purpose applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
-70
UNIT
V
Open emitter
Open base
-50
V
Open collector
-6
V
-12
A
IB
Base current
-4
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
100
W
℃
℃
Tj
150
Tstg
-55~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1205
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=-25mA ;IB=0
-50
IC=-5A; IB=-0.12A
VCB=-70V; IE=0
VEB=-6V; IC=0
-0.5
-0.1
-0.1
V
mA
mA
IEBO
hFE
DC current gain
IC=-5A ; VCE=-0.5V
IE=3A ; VCE=-12V
40
fT
Transition frequency
20
MHz
Switching times
ton
tstg
tf
Turn-on time
0.60
0.50
0.25
μs
μs
μs
IC=-5A;RL=4Ω
IB1=-IB2=-0.12A
VCC=-20V
Storage time
Fall time
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1205
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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